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| CEPF634/CEBF634 Nov. 2002 N-Channel Enhancement Mode Field Effect Transistor FEATURES 250V , 8.1A , RDS(ON)=450m @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D 4 D G G D S G S CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 250 30 8.1 32 8.1 74 0.59 -55 to 150 Unit V V A A A W W/ C C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA 4-27 1.7 62 C/W C/W CEPF634/CEBF634 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) 4 Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS b Condition VGS = 0V, ID = 250A VDS = 250V, VGS = 0V VGS = 30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 5.1A VGS = 10V, VDS = 10V VDS = 50V, ID = 5.1A Min Typ Max Unit 250 25 V A 100 nA 2 4 450 10 4.4 630 100 40 V m A S ON CHARACTERISTICS a Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS b PF PF PF VDS =25V, VGS = 0V f =1.0MHZ SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = 125V, ID = 5.6A, VGS = 10V, RGEN= 12 19 11 46 10 26 40 30 90 30 33 ns ns ns ns nC nC nC VDS =200V, ID = 5.6A, VGS =10V 4-28 5 11 CEPF634/CEBF634 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Diode Forward Voltage Symbol VSD Condition VGS = 0V, Is =8.1A Min Typ Max Unit 0.9 1.5 V 4 DRAIN-SOURCE DIODE CHARACTERISTICS a Notes a.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 12 VGS=10,9,8,7V 10 ID, Drain Current(A) 8 VGS=6V 6 4 2 ID, Drain Current (A) 1 150 C -55 C VGS=5V 25 C 1.VDS=40V 2.Pulse Test VGS=4V 0 0 1 2 3 4 5 6 0.1 2 4 6 8 10 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 900 750 Figure 2. Transfer Characteristics 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 ID=5.1A VGS=10V C, Capacitance (pF) Ciss 600 450 300 150 0 0 10 20 30 40 50 Coss Crss VDS, Drain-to Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature 4-29 CEPF634/CEBF634 1.20 1.10 1.0 0.90 0.80 0.70 0.60 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=250 A BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.30 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 ID=250 A 4 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature 6 VDS=50V Figure 6. Breakdown Voltage Variation with Temperature 20 10 VGS=0V gFS, Transconductance (S) 4 3 2 1 0 0 2 4 6 8 Is, Source-drain current (A) 5 1 0.1 0.4 0.6 0.8 1.0 1.2 IDS, Drain-Source Current (A) VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current 10 Figure 8. Body Diode Forward Voltage Variation with Source Current VGS, Gate to Source Voltage (V) S 8 6 4 2 0 0 N) VDS=200V ID=5.6A ID, Drain Current (A) 10 1 Lim 10 it 0 s 1m (O s RD 10 m s D C 10 0 TC=25 C Tj=150 C Single Pulse 10 1 10 2 10 3 7 14 21 28 10 -1 10 0 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 9. Gate Charge 4-30 Figure 10. Maximum Safe Operating Area CEPF634/CEBF634 VDD t on V IN D VGS RGEN G 90% 4 toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms 10 0 r(t),Normalized Effective Transient Thermal Impedance D=0.5 0.2 0.1 0.05 0.02 0.01 10 -2 10 -1 PDM t1 t2 1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -3 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve 4-31 |
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